AO4421 60v p-channel mosfet general description p roduct summary v ds i d (at v gs =-10v) - 6.2a r ds(on) (at v gs =-10v) < 40m w r ds(on) (at v gs = -4.5v) < 50m w 100% uis tested 100% r g tested symbol v ds v gs i dm t j , t stg typ max 2 4 40 54 75 21 30 maximum junction-to-ambient a steady-state maximum junction-to-lead c steady-state p ower dissipation a t a =25c p arameter maximum junction-to-ambient a t 10s r q j l c/w t hermal characteristics v v c a w junction and storage temperature range -55 to 150 symbol r q j a units c/w c/w t a =25c i d -6.2 t a =70c - 5 p d 3.1 t a =70c 2 p arameter maximum units pulsed drain current b -40 d rain-source voltage -60 gate-source voltage 20 continuous drain current a -60v t he AO4421 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch a nd battery protection applications. absolute maximum ratings t a =25c unless otherwise noted g d s so8 top view bottom view d d d d s s s g rev 3: nov 2010 www.aosmd.com page 1 of 4 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
symbol min typ max units bv dss -60 v -1 t j =55c -5 i gss 100 na v gs(th) -1 -2 -3 v i d(on) -40 a 32 40 t j =125c 53 70 40 50 m w g fs 18 s v sd -0.74 -1 v i s -4.2 a c iss 2417 2900 pf c oss 179 pf c rss 120 pf r g 1.9 2.3 w q g (10v) 46.5 55 nc q g (4.5v) 22.7 nc q gs 9.1 nc q gd 9.2 nc t d(on) 9.8 ns t r 6.1 ns t d(off) 44 ns t f 12.7 ns t rr 34 42 ns q rr 47 nc this product has been designed and qualified for the consumer market. applications or uses as critical c omponents in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice maximum body-diode continuous current i nput capacitance output capacitance turn-on delaytime dynamic parameters v gs =0v, v ds =-30v, f=1mhz gate drain charge total gate charge (10v) v gs =-10v, v ds =-30v, i d =-6.2a turn-on rise time turn-off delaytime v gs =-10v, v ds =-30v, r l =4.7 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time switching parameters total gate charge (4.5v) gate source charge m w v gs =-4.5v, i d =-5a i s =-1a,v gs =0v v ds =-5v, i d =-6.2a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss m a gate threshold voltage v ds =v gs i d =-250 m a v ds =-48v, v gs =0v v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =-6.2a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-6.2a reverse transfer capacitance i f =-6.2a, di/dt=100a/ m s a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 3: nov 2010 w ww.aosmd.com page 2 of 4 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
typical electrical and thermal characteristics: p-channel 0 5 10 15 20 25 0 1 2 3 4 5 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-3v -6v -3.5v -4v -10v -4.5v -5v 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 -v gs (volts) figure 2: transfer characteristics -i d (a) 30 35 40 45 0 5 10 15 20 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w w w w ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.80 1.00 1.20 1.40 1.60 1.80 2.00 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-10v i d =-6.2a v gs =-4.5v i d =-5a 20 30 40 50 60 70 80 90 100 2 3 4 5 6 7 8 9 10 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w w w w ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-6.2a 25c 125c rev 3: nov 2010 www.aosmd.com page 3 of 4 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
typical electrical and thermal characteristics: p-channel 0 2 4 6 8 10 0 10 20 30 40 50 -q g (nc) fi gure 7: gate-charge characteristics -v gs (volts) 0 500 1000 1500 2000 2500 3000 3500 0 10 20 30 40 50 60 -v ds (volts) fi gure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z q q q q j a normalized transient t h ermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c, t a =25c v ds =-30v i d =-6.2a single pulse d=t on /t t j,pk =t a +p dm .z q ja . r q ja r q ja = 40c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 m s rev 3: nov 2010 w ww.aosmd.com page 4 of 4 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
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